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- etymologie
Wat (wie) is Ferromagnetic RAM - definitie
TYPE OF NON-VOLATILE RANDOM-ACCESS MEMORY WHICH STORES DATA IN MAGNETIC DOMAINS
Magnetic Random Access Memory; Ferromagnetic RAM; M-RAM; Mram; MRAM; Magnetic random access memory; Magnetoresistive Random Access Memory; Spin-transfer torque magnetoresistive random access memory; Magnetoresistive random access memory; Spin-torque magnetoresistive RAM; ST-MRAM; Spin-torque magneto-resistive random-access memory; Spin-Torque Magnetoresistive RAM; Spin-torque magneto-resistive RAM; Spin-Torque Magnetoresistive Random Access Memory; Spin-torque magnetoresistive random-access memory; Magnetoresistive random-access memory
![First 200mm 1 Mb MRAM wafer, fabricated by [[Motorola]], 2001](https://commons.wikimedia.org/wiki/Special:FilePath/200mm 1 Mb MRAM - D60 Symposium - Defense Advanced Research Projects Agency - DSC05568.jpg?width=200 "First 200mm 1 Mb MRAM wafer, fabricated by [[Motorola]], 2001")
ram-raid
TYPE OF BURGLARY IN WHICH A VEHICLE IS DRIVEN INTO A BUILDING
Ramraiding; Ram raid; Ram raiding; Ram-raid; Ramraid; Ram raids
(ram-raids, ram-raiding, ram-raided)
1.
A ram-raid is the crime of using a car to drive into and break a shop window in order to steal things from the shop. (BRIT)
A shop in Station Road was the target of a ram-raid early yesterday.
N-COUNT
2.
If people ram-raid, they use a car to drive into and break a shop window in order to steal things from the shop. (BRIT)
The kids who are joyriding and ram-raiding are unemployed.
VERB: V, also V n
• ram-raider (ram-raiders)
Ram-raiders smashed their way into a high-class store.
N-COUNT
Magnetoresistive RAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory.
MRAM
Magnetoresistive Random Access Memory (Reference: IC, RAM)
Wikipedia
Magnetoresistive RAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.
